| Message ID | 1507811765-31005-4-git-send-email-m.purski@samsung.com (mailing list archive) |
|---|---|
| State | Superseded |
| Headers | show |
On Thu, Oct 12, 2017 at 2:36 PM, Maciej Purski <m.purski@samsung.com> wrote: > Add optional max expected current property which allows calibrating > the ina sensor in order to achieve requested measure scale. Document > the changes in Documentation/hwmon/ina2xx. > > Signed-off-by: Maciej Purski <m.purski@samsung.com> > --- > Documentation/devicetree/bindings/hwmon/ina2xx.txt | 4 +++- > Documentation/hwmon/ina2xx | 3 +++ > 2 files changed, 6 insertions(+), 1 deletion(-) > > diff --git a/Documentation/devicetree/bindings/hwmon/ina2xx.txt b/Documentation/devicetree/bindings/hwmon/ina2xx.txt > index 02af0d9..49ef0be 100644 > --- a/Documentation/devicetree/bindings/hwmon/ina2xx.txt > +++ b/Documentation/devicetree/bindings/hwmon/ina2xx.txt > @@ -14,11 +14,13 @@ Optional properties: > > - shunt-resistor > Shunt resistor value in micro-Ohm > - > +- ti-max-expected-current-microamp > + Max expected current value in mA > Example: > > ina220@44 { > compatible = "ti,ina220"; > reg = <0x44>; > shunt-resistor = <1000>; > + ti-max-expected-current-microamp = <3000>; > }; > diff --git a/Documentation/hwmon/ina2xx b/Documentation/hwmon/ina2xx > index cfd31d9..30620e8 100644 > --- a/Documentation/hwmon/ina2xx > +++ b/Documentation/hwmon/ina2xx > @@ -55,6 +55,9 @@ The shunt value in micro-ohms can be set via platform data or device tree at > compile-time or via the shunt_resistor attribute in sysfs at run-time. Please > refer to the Documentation/devicetree/bindings/i2c/ina2xx.txt for bindings > if the device tree is used. > +The max expected current value in miliamp can be set via platform data mili or micro? BR, Krzysztof > +or device tree at compile-time or via currX_max attribute in sysfs > +at run-time. > > Additionally ina226 supports update_interval attribute as described in > Documentation/hwmon/sysfs-interface. Internally the interval is the sum of > -- > 2.7.4 > -- To unsubscribe from this list: send the line "unsubscribe linux-samsung-soc" in the body of a message to majordomo@vger.kernel.org More majordomo info at http://vger.kernel.org/majordomo-info.html
On 10/12/2017 02:39 PM, Krzysztof Kozlowski wrote: > On Thu, Oct 12, 2017 at 2:36 PM, Maciej Purski <m.purski@samsung.com> wrote: >> Add optional max expected current property which allows calibrating >> the ina sensor in order to achieve requested measure scale. Document >> the changes in Documentation/hwmon/ina2xx. >> >> Signed-off-by: Maciej Purski <m.purski@samsung.com> >> --- >> Documentation/devicetree/bindings/hwmon/ina2xx.txt | 4 +++- >> Documentation/hwmon/ina2xx | 3 +++ >> 2 files changed, 6 insertions(+), 1 deletion(-) >> >> diff --git a/Documentation/devicetree/bindings/hwmon/ina2xx.txt b/Documentation/devicetree/bindings/hwmon/ina2xx.txt >> index 02af0d9..49ef0be 100644 >> --- a/Documentation/devicetree/bindings/hwmon/ina2xx.txt >> +++ b/Documentation/devicetree/bindings/hwmon/ina2xx.txt >> @@ -14,11 +14,13 @@ Optional properties: >> >> - shunt-resistor >> Shunt resistor value in micro-Ohm >> - >> +- ti-max-expected-current-microamp >> + Max expected current value in mA >> Example: >> >> ina220@44 { >> compatible = "ti,ina220"; >> reg = <0x44>; >> shunt-resistor = <1000>; >> + ti-max-expected-current-microamp = <3000>; >> }; >> diff --git a/Documentation/hwmon/ina2xx b/Documentation/hwmon/ina2xx >> index cfd31d9..30620e8 100644 >> --- a/Documentation/hwmon/ina2xx >> +++ b/Documentation/hwmon/ina2xx >> @@ -55,6 +55,9 @@ The shunt value in micro-ohms can be set via platform data or device tree at >> compile-time or via the shunt_resistor attribute in sysfs at run-time. Please >> refer to the Documentation/devicetree/bindings/i2c/ina2xx.txt for bindings >> if the device tree is used. >> +The max expected current value in miliamp can be set via platform data > > mili or micro? > > BR, > Krzysztof Sorry, these should be mili everywhere. I'll fix this. > >> +or device tree at compile-time or via currX_max attribute in sysfs >> +at run-time. >> >> Additionally ina226 supports update_interval attribute as described in >> Documentation/hwmon/sysfs-interface. Internally the interval is the sum of >> -- >> 2.7.4 >> > > > -- To unsubscribe from this list: send the line "unsubscribe linux-samsung-soc" in the body of a message to majordomo@vger.kernel.org More majordomo info at http://vger.kernel.org/majordomo-info.html
On 10/12/2017 06:00 AM, Maciej Purski wrote: > > > On 10/12/2017 02:39 PM, Krzysztof Kozlowski wrote: >> On Thu, Oct 12, 2017 at 2:36 PM, Maciej Purski <m.purski@samsung.com> wrote: >>> Add optional max expected current property which allows calibrating >>> the ina sensor in order to achieve requested measure scale. Document >>> the changes in Documentation/hwmon/ina2xx. >>> >>> Signed-off-by: Maciej Purski <m.purski@samsung.com> >>> --- >>> Documentation/devicetree/bindings/hwmon/ina2xx.txt | 4 +++- >>> Documentation/hwmon/ina2xx | 3 +++ >>> 2 files changed, 6 insertions(+), 1 deletion(-) >>> >>> diff --git a/Documentation/devicetree/bindings/hwmon/ina2xx.txt b/Documentation/devicetree/bindings/hwmon/ina2xx.txt >>> index 02af0d9..49ef0be 100644 >>> --- a/Documentation/devicetree/bindings/hwmon/ina2xx.txt >>> +++ b/Documentation/devicetree/bindings/hwmon/ina2xx.txt >>> @@ -14,11 +14,13 @@ Optional properties: >>> >>> - shunt-resistor >>> Shunt resistor value in micro-Ohm >>> - >>> +- ti-max-expected-current-microamp >>> + Max expected current value in mA >>> Example: >>> >>> ina220@44 { >>> compatible = "ti,ina220"; >>> reg = <0x44>; >>> shunt-resistor = <1000>; >>> + ti-max-expected-current-microamp = <3000>; >>> }; >>> diff --git a/Documentation/hwmon/ina2xx b/Documentation/hwmon/ina2xx >>> index cfd31d9..30620e8 100644 >>> --- a/Documentation/hwmon/ina2xx >>> +++ b/Documentation/hwmon/ina2xx >>> @@ -55,6 +55,9 @@ The shunt value in micro-ohms can be set via platform data or device tree at >>> compile-time or via the shunt_resistor attribute in sysfs at run-time. Please >>> refer to the Documentation/devicetree/bindings/i2c/ina2xx.txt for bindings >>> if the device tree is used. >>> +The max expected current value in miliamp can be set via platform data >> >> mili or micro? >> >> BR, >> Krzysztof > > Sorry, these should be mili everywhere. I'll fix this. > You sure ? I think DT usually uses micro. Guenter >> >>> +or device tree at compile-time or via currX_max attribute in sysfs >>> +at run-time. >>> >>> Additionally ina226 supports update_interval attribute as described in >>> Documentation/hwmon/sysfs-interface. Internally the interval is the sum of >>> -- >>> 2.7.4 >>> >> >> >> > -- To unsubscribe from this list: send the line "unsubscribe linux-samsung-soc" in the body of a message to majordomo@vger.kernel.org More majordomo info at http://vger.kernel.org/majordomo-info.html
On 10/12/2017 03:55 PM, Guenter Roeck wrote: > On 10/12/2017 06:00 AM, Maciej Purski wrote: >> >> >> On 10/12/2017 02:39 PM, Krzysztof Kozlowski wrote: >>> On Thu, Oct 12, 2017 at 2:36 PM, Maciej Purski <m.purski@samsung.com> wrote: >>>> Add optional max expected current property which allows calibrating >>>> the ina sensor in order to achieve requested measure scale. Document >>>> the changes in Documentation/hwmon/ina2xx. >>>> >>>> Signed-off-by: Maciej Purski <m.purski@samsung.com> >>>> --- >>>> Documentation/devicetree/bindings/hwmon/ina2xx.txt | 4 +++- >>>> Documentation/hwmon/ina2xx | 3 +++ >>>> 2 files changed, 6 insertions(+), 1 deletion(-) >>>> >>>> diff --git a/Documentation/devicetree/bindings/hwmon/ina2xx.txt >>>> b/Documentation/devicetree/bindings/hwmon/ina2xx.txt >>>> index 02af0d9..49ef0be 100644 >>>> --- a/Documentation/devicetree/bindings/hwmon/ina2xx.txt >>>> +++ b/Documentation/devicetree/bindings/hwmon/ina2xx.txt >>>> @@ -14,11 +14,13 @@ Optional properties: >>>> >>>> - shunt-resistor >>>> Shunt resistor value in micro-Ohm >>>> - >>>> +- ti-max-expected-current-microamp >>>> + Max expected current value in mA >>>> Example: >>>> >>>> ina220@44 { >>>> compatible = "ti,ina220"; >>>> reg = <0x44>; >>>> shunt-resistor = <1000>; >>>> + ti-max-expected-current-microamp = <3000>; >>>> }; >>>> diff --git a/Documentation/hwmon/ina2xx b/Documentation/hwmon/ina2xx >>>> index cfd31d9..30620e8 100644 >>>> --- a/Documentation/hwmon/ina2xx >>>> +++ b/Documentation/hwmon/ina2xx >>>> @@ -55,6 +55,9 @@ The shunt value in micro-ohms can be set via platform data >>>> or device tree at >>>> compile-time or via the shunt_resistor attribute in sysfs at run-time. Please >>>> refer to the Documentation/devicetree/bindings/i2c/ina2xx.txt for bindings >>>> if the device tree is used. >>>> +The max expected current value in miliamp can be set via platform data >>> >>> mili or micro? >>> >>> BR, >>> Krzysztof >> >> Sorry, these should be mili everywhere. I'll fix this. >> > > You sure ? I think DT usually uses micro. > > Guenter Yeah, you're right. I was intending to make it milli, but I haven't checked that all DTS use micro. Sorry for confusion. Best Regards, Maciej > >>> >>>> +or device tree at compile-time or via currX_max attribute in sysfs >>>> +at run-time. >>>> >>>> Additionally ina226 supports update_interval attribute as described in >>>> Documentation/hwmon/sysfs-interface. Internally the interval is the sum of >>>> -- >>>> 2.7.4 >>>> >>> >>> >>> >> > > > > -- To unsubscribe from this list: send the line "unsubscribe linux-samsung-soc" in the body of a message to majordomo@vger.kernel.org More majordomo info at http://vger.kernel.org/majordomo-info.html
On Thu, Oct 12, 2017 at 02:36:04PM +0200, Maciej Purski wrote: > Add optional max expected current property which allows calibrating > the ina sensor in order to achieve requested measure scale. Document > the changes in Documentation/hwmon/ina2xx. > > Signed-off-by: Maciej Purski <m.purski@samsung.com> > --- > Documentation/devicetree/bindings/hwmon/ina2xx.txt | 4 +++- > Documentation/hwmon/ina2xx | 3 +++ > 2 files changed, 6 insertions(+), 1 deletion(-) > > diff --git a/Documentation/devicetree/bindings/hwmon/ina2xx.txt b/Documentation/devicetree/bindings/hwmon/ina2xx.txt > index 02af0d9..49ef0be 100644 > --- a/Documentation/devicetree/bindings/hwmon/ina2xx.txt > +++ b/Documentation/devicetree/bindings/hwmon/ina2xx.txt > @@ -14,11 +14,13 @@ Optional properties: > > - shunt-resistor > Shunt resistor value in micro-Ohm > - > +- ti-max-expected-current-microamp > + Max expected current value in mA ti,max-... The property name is a bit long. Does "expected" add anything? Is there a max unexpected current? > Example: > > ina220@44 { > compatible = "ti,ina220"; > reg = <0x44>; > shunt-resistor = <1000>; > + ti-max-expected-current-microamp = <3000>; > }; > diff --git a/Documentation/hwmon/ina2xx b/Documentation/hwmon/ina2xx > index cfd31d9..30620e8 100644 > --- a/Documentation/hwmon/ina2xx > +++ b/Documentation/hwmon/ina2xx > @@ -55,6 +55,9 @@ The shunt value in micro-ohms can be set via platform data or device tree at > compile-time or via the shunt_resistor attribute in sysfs at run-time. Please > refer to the Documentation/devicetree/bindings/i2c/ina2xx.txt for bindings > if the device tree is used. > +The max expected current value in miliamp can be set via platform data > +or device tree at compile-time or via currX_max attribute in sysfs > +at run-time. > > Additionally ina226 supports update_interval attribute as described in > Documentation/hwmon/sysfs-interface. Internally the interval is the sum of > -- > 2.7.4 > -- To unsubscribe from this list: send the line "unsubscribe linux-samsung-soc" in the body of a message to majordomo@vger.kernel.org More majordomo info at http://vger.kernel.org/majordomo-info.html
On Tue, Oct 17, 2017 at 03:36:31PM -0500, Rob Herring wrote: > On Thu, Oct 12, 2017 at 02:36:04PM +0200, Maciej Purski wrote: > > Add optional max expected current property which allows calibrating > > the ina sensor in order to achieve requested measure scale. Document > > the changes in Documentation/hwmon/ina2xx. > > > > Signed-off-by: Maciej Purski <m.purski@samsung.com> > > --- > > Documentation/devicetree/bindings/hwmon/ina2xx.txt | 4 +++- > > Documentation/hwmon/ina2xx | 3 +++ > > 2 files changed, 6 insertions(+), 1 deletion(-) > > > > diff --git a/Documentation/devicetree/bindings/hwmon/ina2xx.txt b/Documentation/devicetree/bindings/hwmon/ina2xx.txt > > index 02af0d9..49ef0be 100644 > > --- a/Documentation/devicetree/bindings/hwmon/ina2xx.txt > > +++ b/Documentation/devicetree/bindings/hwmon/ina2xx.txt > > @@ -14,11 +14,13 @@ Optional properties: > > > > - shunt-resistor > > Shunt resistor value in micro-Ohm > > - > > +- ti-max-expected-current-microamp > > + Max expected current value in mA > > ti,max-... > > The property name is a bit long. Does "expected" add anything? Is there > a max unexpected current? > I am not too happy with it either. To me it suggests that there _can_ be an unexpected current (why specify a max _expected_ current otherwise ?), and that unexpected current won't be measurable and thus not reported because it is ... well, unexpected. Guenter > > Example: > > > > ina220@44 { > > compatible = "ti,ina220"; > > reg = <0x44>; > > shunt-resistor = <1000>; > > + ti-max-expected-current-microamp = <3000>; > > }; > > diff --git a/Documentation/hwmon/ina2xx b/Documentation/hwmon/ina2xx > > index cfd31d9..30620e8 100644 > > --- a/Documentation/hwmon/ina2xx > > +++ b/Documentation/hwmon/ina2xx > > @@ -55,6 +55,9 @@ The shunt value in micro-ohms can be set via platform data or device tree at > > compile-time or via the shunt_resistor attribute in sysfs at run-time. Please > > refer to the Documentation/devicetree/bindings/i2c/ina2xx.txt for bindings > > if the device tree is used. > > +The max expected current value in miliamp can be set via platform data > > +or device tree at compile-time or via currX_max attribute in sysfs > > +at run-time. > > > > Additionally ina226 supports update_interval attribute as described in > > Documentation/hwmon/sysfs-interface. Internally the interval is the sum of > > -- > > 2.7.4 > > -- To unsubscribe from this list: send the line "unsubscribe linux-samsung-soc" in the body of a message to majordomo@vger.kernel.org More majordomo info at http://vger.kernel.org/majordomo-info.html
On Tue, 17 Oct 2017 13:58:21 -0700 Guenter Roeck <linux@roeck-us.net> wrote: > On Tue, Oct 17, 2017 at 03:36:31PM -0500, Rob Herring wrote: > > On Thu, Oct 12, 2017 at 02:36:04PM +0200, Maciej Purski wrote: > > > Add optional max expected current property which allows calibrating > > > the ina sensor in order to achieve requested measure scale. Document > > > the changes in Documentation/hwmon/ina2xx. > > > > > > Signed-off-by: Maciej Purski <m.purski@samsung.com> > > > --- > > > Documentation/devicetree/bindings/hwmon/ina2xx.txt | 4 +++- > > > Documentation/hwmon/ina2xx | 3 +++ > > > 2 files changed, 6 insertions(+), 1 deletion(-) > > > > > > diff --git a/Documentation/devicetree/bindings/hwmon/ina2xx.txt b/Documentation/devicetree/bindings/hwmon/ina2xx.txt > > > index 02af0d9..49ef0be 100644 > > > --- a/Documentation/devicetree/bindings/hwmon/ina2xx.txt > > > +++ b/Documentation/devicetree/bindings/hwmon/ina2xx.txt > > > @@ -14,11 +14,13 @@ Optional properties: > > > > > > - shunt-resistor > > > Shunt resistor value in micro-Ohm > > > - > > > +- ti-max-expected-current-microamp > > > + Max expected current value in mA > > > > ti,max-... > > > > The property name is a bit long. Does "expected" add anything? Is there > > a max unexpected current? > > > I am not too happy with it either. To me it suggests that there _can_ be > an unexpected current (why specify a max _expected_ current otherwise ?), > and that unexpected current won't be measurable and thus not reported > because it is ... well, unexpected. After calibration I 'think' this corresponds to the maximum current that the device can measure (it's applying scaling inside to make full use of available range of the register - there are some arguments that there is an optimum value after which we could do better in software). I guess the issue here is that this that we might need to separate the maximum current the device is capable of measuring from what it is currently configured to measure. No idea how to describe that :) Jonathan > > Guenter > > > > Example: > > > > > > ina220@44 { > > > compatible = "ti,ina220"; > > > reg = <0x44>; > > > shunt-resistor = <1000>; > > > + ti-max-expected-current-microamp = <3000>; > > > }; > > > diff --git a/Documentation/hwmon/ina2xx b/Documentation/hwmon/ina2xx > > > index cfd31d9..30620e8 100644 > > > --- a/Documentation/hwmon/ina2xx > > > +++ b/Documentation/hwmon/ina2xx > > > @@ -55,6 +55,9 @@ The shunt value in micro-ohms can be set via platform data or device tree at > > > compile-time or via the shunt_resistor attribute in sysfs at run-time. Please > > > refer to the Documentation/devicetree/bindings/i2c/ina2xx.txt for bindings > > > if the device tree is used. > > > +The max expected current value in miliamp can be set via platform data > > > +or device tree at compile-time or via currX_max attribute in sysfs > > > +at run-time. > > > > > > Additionally ina226 supports update_interval attribute as described in > > > Documentation/hwmon/sysfs-interface. Internally the interval is the sum of > > > -- > > > 2.7.4 > > > > -- > To unsubscribe from this list: send the line "unsubscribe linux-iio" in > the body of a message to majordomo@vger.kernel.org > More majordomo info at http://vger.kernel.org/majordomo-info.html -- To unsubscribe from this list: send the line "unsubscribe linux-samsung-soc" in the body of a message to majordomo@vger.kernel.org More majordomo info at http://vger.kernel.org/majordomo-info.html
diff --git a/Documentation/devicetree/bindings/hwmon/ina2xx.txt b/Documentation/devicetree/bindings/hwmon/ina2xx.txt index 02af0d9..49ef0be 100644 --- a/Documentation/devicetree/bindings/hwmon/ina2xx.txt +++ b/Documentation/devicetree/bindings/hwmon/ina2xx.txt @@ -14,11 +14,13 @@ Optional properties: - shunt-resistor Shunt resistor value in micro-Ohm - +- ti-max-expected-current-microamp + Max expected current value in mA Example: ina220@44 { compatible = "ti,ina220"; reg = <0x44>; shunt-resistor = <1000>; + ti-max-expected-current-microamp = <3000>; }; diff --git a/Documentation/hwmon/ina2xx b/Documentation/hwmon/ina2xx index cfd31d9..30620e8 100644 --- a/Documentation/hwmon/ina2xx +++ b/Documentation/hwmon/ina2xx @@ -55,6 +55,9 @@ The shunt value in micro-ohms can be set via platform data or device tree at compile-time or via the shunt_resistor attribute in sysfs at run-time. Please refer to the Documentation/devicetree/bindings/i2c/ina2xx.txt for bindings if the device tree is used. +The max expected current value in miliamp can be set via platform data +or device tree at compile-time or via currX_max attribute in sysfs +at run-time. Additionally ina226 supports update_interval attribute as described in Documentation/hwmon/sysfs-interface. Internally the interval is the sum of
Add optional max expected current property which allows calibrating the ina sensor in order to achieve requested measure scale. Document the changes in Documentation/hwmon/ina2xx. Signed-off-by: Maciej Purski <m.purski@samsung.com> --- Documentation/devicetree/bindings/hwmon/ina2xx.txt | 4 +++- Documentation/hwmon/ina2xx | 3 +++ 2 files changed, 6 insertions(+), 1 deletion(-)