diff mbox

[v3,1/7] dt-bindings: mtd: document new nand-rb property

Message ID 20180109103637.23798-2-miquel.raynal@free-electrons.com (mailing list archive)
State New, archived
Headers show

Commit Message

Miquel Raynal Jan. 9, 2018, 10:36 a.m. UTC
There are already an atmel,rb and an allwinner,rb properties, let's not
make other ones and instead use a generic term: nand-rb to define NAND
chips Ready/Busy lines.

Signed-off-by: Miquel Raynal <miquel.raynal@free-electrons.com>
---
 Documentation/devicetree/bindings/mtd/nand.txt | 1 +
 1 file changed, 1 insertion(+)

Comments

Rob Herring (Arm) Jan. 11, 2018, 10:23 p.m. UTC | #1
On Tue, Jan 09, 2018 at 11:36:31AM +0100, Miquel Raynal wrote:
> There are already an atmel,rb and an allwinner,rb properties, let's not
> make other ones and instead use a generic term: nand-rb to define NAND
> chips Ready/Busy lines.
> 
> Signed-off-by: Miquel Raynal <miquel.raynal@free-electrons.com>
> ---
>  Documentation/devicetree/bindings/mtd/nand.txt | 1 +
>  1 file changed, 1 insertion(+)

Reviewed-by: Rob Herring <robh@kernel.org>
diff mbox

Patch

diff --git a/Documentation/devicetree/bindings/mtd/nand.txt b/Documentation/devicetree/bindings/mtd/nand.txt
index 133f3813719c..8bb11d809429 100644
--- a/Documentation/devicetree/bindings/mtd/nand.txt
+++ b/Documentation/devicetree/bindings/mtd/nand.txt
@@ -43,6 +43,7 @@  Optional NAND chip properties:
 		     This is particularly useful when only the in-band area is
 		     used by the upper layers, and you want to make your NAND
 		     as reliable as possible.
+- nand-rb: shall contain the native Ready/Busy ids.
 
 The ECC strength and ECC step size properties define the correction capability
 of a controller. Together, they say a controller can correct "{strength} bit