diff --git a/include/linux/mfd/cros_ec_commands.h b/include/linux/mfd/cros_ec_commands.h
index 2e5c93d858d8..393c5abab7a0 100644
--- a/include/linux/mfd/cros_ec_commands.h
+++ b/include/linux/mfd/cros_ec_commands.h
@@ -1108,6 +1108,7 @@ struct ec_response_get_features {
 
 /* Get flash info */
 #define EC_CMD_FLASH_INFO 0x0010
+#define EC_VER_FLASH_INFO 2
 
 /**
  * struct ec_response_flash_info - Response to the flash info command.
@@ -1134,6 +1135,15 @@ struct ec_response_flash_info {
  */
 #define EC_FLASH_INFO_ERASE_TO_0 BIT(0)
 
+/*
+ * Flash must be selected for read/write/erase operations to succeed.  This may
+ * be necessary on a chip where write/erase can be corrupted by other board
+ * activity, or where the chip needs to enable some sort of programming voltage,
+ * or where the read/write/erase operations require cleanly suspending other
+ * chip functionality.
+ */
+#define EC_FLASH_INFO_SELECT_REQUIRED BIT(1)
+
 /**
  * struct ec_response_flash_info_1 - Response to the flash info v1 command.
  * @flash_size: Usable flash size in bytes.
@@ -1156,6 +1166,12 @@ struct ec_response_flash_info {
  * gcc anonymous structs don't seem to get along with the __packed directive;
  * if they did we'd define the version 0 structure as a sub-structure of this
  * one.
+ *
+ * Version 2 supports flash banks of different sizes:
+ * The caller specified the number of banks it has preallocated
+ * (num_banks_desc)
+ * The EC returns the number of banks describing the flash memory.
+ * It adds banks descriptions up to num_banks_desc.
  */
 struct ec_response_flash_info_1 {
 	/* Version 0 fields; see above for description */
@@ -1169,6 +1185,42 @@ struct ec_response_flash_info_1 {
 	uint32_t flags;
 } __ec_align4;
 
+struct ec_params_flash_info_2 {
+	/* Number of banks to describe */
+	uint16_t num_banks_desc;
+	/* Reserved; set 0; ignore on read */
+	uint8_t reserved[2];
+} __ec_align4;
+
+struct ec_flash_bank {
+	/* Number of sector is in this bank. */
+	uint16_t count;
+	/* Size in power of 2 of each sector (8 --> 256 bytes) */
+	uint8_t size_exp;
+	/* Minimal write size for the sectors in this bank */
+	uint8_t write_size_exp;
+	/* Erase size for the sectors in this bank */
+	uint8_t erase_size_exp;
+	/* Size for write protection, usually identical to erase size. */
+	uint8_t protect_size_exp;
+	/* Reserved; set 0; ignore on read */
+	uint8_t reserved[2];
+};
+
+struct ec_response_flash_info_2 {
+	/* Total flash in the EC. */
+	uint32_t flash_size;
+	/* Flags; see EC_FLASH_INFO_* */
+	uint32_t flags;
+	/* Maximum size to use to send data to write to the EC. */
+	uint32_t write_ideal_size;
+	/* Number of banks present in the EC. */
+	uint16_t num_banks_total;
+	/* Number of banks described in banks array. */
+	uint16_t num_banks_desc;
+	struct ec_flash_bank banks[0];
+} __ec_align4;
+
 /*
  * Read flash
  *
@@ -1208,7 +1260,7 @@ struct ec_params_flash_write {
 #define EC_CMD_FLASH_ERASE 0x0013
 
 /**
- * struct ec_params_flash_erase - Parameters for the flash erase command.
+ * struct ec_params_flash_erase - Parameters for the flash erase command, v0.
  * @offset: Byte offset to erase.
  * @size: Size to erase in bytes.
  */
@@ -1217,6 +1269,43 @@ struct ec_params_flash_erase {
 	uint32_t size;
 } __ec_align4;
 
+/*
+ * v1 add async erase:
+ * subcommands can returns:
+ * EC_RES_SUCCESS : erased (see ERASE_SECTOR_ASYNC case below).
+ * EC_RES_INVALID_PARAM : offset/size are not aligned on a erase boundary.
+ * EC_RES_ERROR : other errors.
+ * EC_RES_BUSY : an existing erase operation is in progress.
+ * EC_RES_ACCESS_DENIED: Trying to erase running image.
+ *
+ * When ERASE_SECTOR_ASYNC returns EC_RES_SUCCESS, the operation is just
+ * properly queued. The user must call ERASE_GET_RESULT subcommand to get
+ * the proper result.
+ * When ERASE_GET_RESULT returns EC_RES_BUSY, the caller must wait and send
+ * ERASE_GET_RESULT again to get the result of ERASE_SECTOR_ASYNC.
+ * ERASE_GET_RESULT command may timeout on EC where flash access is not
+ * permitted while erasing. (For instance, STM32F4).
+ */
+enum ec_flash_erase_cmd {
+	FLASH_ERASE_SECTOR,     /* Erase and wait for result */
+	FLASH_ERASE_SECTOR_ASYNC,  /* Erase and return immediately. */
+	FLASH_ERASE_GET_RESULT,  /* Ask for last erase result */
+};
+
+/**
+ * struct ec_params_flash_erase_v1 - Parameters for the flash erase command, v1.
+ * @cmd: One of ec_flash_erase_cmd.
+ * @reserved: Pad byte; currently always contains 0.
+ * @flag: No flags defined yet; set to 0.
+ * @params: Same as v0 parameters.
+ */
+struct ec_params_flash_erase_v1 {
+	uint8_t  cmd;
+	uint8_t  reserved;
+	uint16_t flag;
+	struct ec_params_flash_erase params;
+} __ec_align4;
+
 /*
  * Get/set flash protection.
  *
@@ -1252,6 +1341,15 @@ struct ec_params_flash_erase {
 #define EC_FLASH_PROTECT_ERROR_INCONSISTENT BIT(5)
 /* Entire flash code protected when the EC boots */
 #define EC_FLASH_PROTECT_ALL_AT_BOOT        BIT(6)
+/* RW flash code protected when the EC boots */
+#define EC_FLASH_PROTECT_RW_AT_BOOT         BIT(7)
+/* RW flash code protected now. */
+#define EC_FLASH_PROTECT_RW_NOW             BIT(8)
+/* Rollback information flash region protected when the EC boots */
+#define EC_FLASH_PROTECT_ROLLBACK_AT_BOOT   BIT(9)
+/* Rollback information flash region protected now */
+#define EC_FLASH_PROTECT_ROLLBACK_NOW       BIT(10)
+
 
 /**
  * struct ec_params_flash_protect - Parameters for the flash protect command.
@@ -1290,16 +1388,31 @@ struct ec_response_flash_protect {
 enum ec_flash_region {
 	/* Region which holds read-only EC image */
 	EC_FLASH_REGION_RO = 0,
-	/* Region which holds rewritable EC image */
-	EC_FLASH_REGION_RW,
+	/*
+	 * Region which holds active RW image. 'Active' is different from
+	 * 'running'. Active means 'scheduled-to-run'. Since RO image always
+	 * scheduled to run, active/non-active applies only to RW images (for
+	 * the same reason 'update' applies only to RW images. It's a state of
+	 * an image on a flash. Running image can be RO, RW_A, RW_B but active
+	 * image can only be RW_A or RW_B. In recovery mode, an active RW image
+	 * doesn't enter 'running' state but it's still active on a flash.
+	 */
+	EC_FLASH_REGION_ACTIVE,
 	/*
 	 * Region which should be write-protected in the factory (a superset of
 	 * EC_FLASH_REGION_RO)
 	 */
 	EC_FLASH_REGION_WP_RO,
+	/* Region which holds updatable (non-active) RW image */
+	EC_FLASH_REGION_UPDATE,
 	/* Number of regions */
 	EC_FLASH_REGION_COUNT,
 };
+/*
+ * 'RW' is vague if there are multiple RW images; we mean the active one,
+ * so the old constant is deprecated.
+ */
+#define EC_FLASH_REGION_RW EC_FLASH_REGION_ACTIVE
 
 /**
  * struct ec_params_flash_region_info - Parameters for the flash region info
@@ -1334,6 +1447,37 @@ struct ec_response_vbnvcontext {
 	uint8_t block[EC_VBNV_BLOCK_SIZE];
 } __ec_align4;
 
+
+/* Get SPI flash information */
+#define EC_CMD_FLASH_SPI_INFO 0x0018
+
+struct ec_response_flash_spi_info {
+	/* JEDEC info from command 0x9F (manufacturer, memory type, size) */
+	uint8_t jedec[3];
+
+	/* Pad byte; currently always contains 0 */
+	uint8_t reserved0;
+
+	/* Manufacturer / device ID from command 0x90 */
+	uint8_t mfr_dev_id[2];
+
+	/* Status registers from command 0x05 and 0x35 */
+	uint8_t sr1, sr2;
+} __ec_align1;
+
+
+/* Select flash during flash operations */
+#define EC_CMD_FLASH_SELECT 0x0019
+
+/**
+ * struct ec_params_flash_select - Parameters for the flash select command.
+ * @select: 1 to select flash, 0 to deselect flash
+ */
+struct ec_params_flash_select {
+	uint8_t select;
+} __ec_align4;
+
+
 /*****************************************************************************/
 /* PWM commands */
 
